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| Part Number | Description | Attribute |
| 1N4148TR | 1N4148 Series 100 V 500 mW Small Signal Fast Switching Diode - DO-35 | Reverse Voltage-Max [Vrrm]: 100 V Forward Voltage: 1 V Average Forward Current-Max: 200 mA Reverse Recovery Time-Max: 4 ns Power Dissipation: 500 mW |
| 2N7002 | N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23 | Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 60 V Drain-Source On Resistance-Max: 7.5 Ω Rated Power Dissipation: 200 mW |
| S1G | S1 Series 400 V 1 A 1 uA Surface Mount General Purpose Rectifier - DO-214AC | Average Rectified Current-Max: 1 A Reverse Voltage-Max [Vrrm]: 400 V Reverse Recovery Time-Max: 1.8 µs Forward Voltage: 1.1 V Reverse Current-Max: 1 µA |
| FDV301N | N-Channel 25 V 4 Ohm Surface Mount Digital FET - SOT-23-3 | Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 25 V Drain-Source On Resistance-Max: 4 Ω Qg Gate Charge: 0.7 nC Rated Power Dissipation: 0.35 W |
| MMBD1204 | MMBD Series 350 mW 100 V 200 mA Surface Mount Small Signal Diode - SOT-23-3 | Power Dissipation: 350 mW Reverse Voltage-Max [Vrrm]: 100 V Reverse Recovery Time-Max: 4 ns Average Forward Current-Max: 0.2 A Peak Current-Max: 2 A |
| FDN337N | N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3 | Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 30 V Drain-Source On Resistance-Max: 0.065 Ω Rated Power Dissipation: 0.5 W |
| MMBT3906 | MMBT3906 Series 40 V CE Breakdown 0.2 A PNP General Purpose Amplifier - SOT-23 | Polarity: PNP Power Dissipation-Tot: 350 mW CE Voltage-Max: 40 V Collector Current @ 100C: 200 mA |
| MMBT3904 | MMBT3904 Series 40 V CE Breakdown 0.2 A NPN General Purpose Amplifier - SOT-23 | Polarity: NPN Power Dissipation-Tot: 350 mW CE Voltage-Max: 40 V Collector Current @ 100C: 200 mA |
| FDV303N | N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3 | Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 25 V Drain-Source On Resistance-Max: 0.45 Ω Qg Gate Charge: 2.3 nC Rated Power Dissipation: 0.35 W |
| BAT54 | BAT54 Series 0.8 V 200 mA 30 V Max Reverse Voltage Schottky Diode - SOT-23-3 | Average Rectified Current-Max: 200 mA Reverse Voltage-Max [Vrrm]: 30 V Peak Current-Max: 600 mA Forward Voltage: 0.8 V Reverse Current-Max: 2 µA Power Dissipation: 290 mW |
| ES1D | ES1D Series 1 A 200 V 15 ns Surface Mount Fast Recovery Rectifier - DO-214AC | Average Rectified Current-Max: 1 A Reverse Voltage-Max [Vrrm]: 200 V Reverse Recovery Time-Max: 15 ns Forward Voltage: 0.92 V Reverse Current-Max: 5 µA |
| 1N4007 | 1N400 Series 1.1 V 1 A 1000 V Max Reverse Voltage Standard Rectifier - DO-41 | Average Rectified Current-Max: 1 A Reverse Voltage-Max [Vrrm]: 1000 V Peak Current-Max: 30 A Forward Voltage: 1.1 V Reverse Current-Max: 5 µA |
| BC856CMTF | BC856 Series 65 V 100 mA 310 mW PNP Epitaxial Silicon Transistor - SOT-23-3 | Polarity: PNP Power Dissipation-Tot: 310 mW CE Voltage-Max: 65 V Collector Current @ 100C: 100 mA DC Current Gain-Min: 110 |
| 1N4148WS | 1N4148WS Series 200 mW 100 V Max Reverse Voltage Small Signal Diode - SOD-323F | Reverse Voltage-Max [Vrrm]: 100 V Forward Voltage: 1 V Average Forward Current-Max: 300 mA Reverse Recovery Time-Max: 4 ns Power Dissipation: 200 mW |
| BAS16 | BAS16 Series 350 mW 85 V Max Reverse Voltage 200 mA Small Signal Diode -SOT-23-3 | Reverse Voltage-Max [Vrrm]: 85 V Forward Voltage: 1 V Average Forward Current-Max: 0.2 A Reverse Recovery Time-Max: 6 ns Power Dissipation: 350 mW |
| NDS331N | N-Channel 20V 0.16 Ω SMT Enhancement Mode Field Effect Transistor SSOT-3 | Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 20 V Drain-Source On Resistance-Max: 0.16 Ω Qg Gate Charge: 5 nC Rated Power Dissipation: 0.46 W |
| NDS351AN | NDS Series N-Channel 30 V 160 mΩ Logic Level PowerTrench Mosfet SSOT-3 | Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 30 V Drain-Source On Resistance-Max: 160 mΩ Qg Gate Charge: 1.8 nC Rated Power Dissipation: 0.46 W |
| BAT54C | BAT54 Series 0.8 V 200 mA 30 V Max Reverse Voltage Schottky Diode - SOT-23-3 | Average Rectified Current-Max: 200 mA Reverse Voltage-Max [Vrrm]: 30 V Peak Current-Max: 600 mA Forward Voltage: 0.8 V Reverse Current-Max: 2 µA Power Dissipation: 290 mW |
| FDC5614P | P-Channel 60 V 105 mohm Logic Level PowerTrench Mosfet - SSOT-6 | Channel Type: P-Channel Drain-to-Source Voltage [Vdss]: 60 V Drain-Source On Resistance-Max: 105 mΩ Qg Gate Charge: 15 nC Rated Power Dissipation: 0.8 W |
| H11L1SR2M | DIP6 SMT Single Channel High Speed 1 MHz 7500 VAC (Pk) Optocoupler | No of Channels: 1 Isolation Voltage-Max: 7500 V Output Voltage-Max: 16 V Operating Temp-Max: 85 °C |
| NDS332P | P-Channel 20V 0.3Ω SMT Enhancement Mode Field Effect Transistor SSOT-3 | Channel Type: P-Channel Drain-to-Source Voltage [Vdss]: 20 V Drain-Source On Resistance-Max: 0.3 Ω Qg Gate Charge: 5 nC Rated Power Dissipation: 0.46 W |
| FDV302P_NB8V001 | FDV302P Series 25 V 10 Ohm Surface Mount P-Channel Digital FET - SOT-23-3 | Channel Type: P-Channel Drain-to-Source Voltage [Vdss]: 25 V Drain-Source On Resistance-Max: 13 Ω Rated Power Dissipation: 0.35 W |
| MMBT2907A | MMBT2907A Series 60 V CE Breakdown .8 A PNP General Purpose Amplifier - SOT-23 | Polarity: PNP Power Dissipation-Tot: 350 mW CE Voltage-Max: 60 V Collector Current @ 100C: 800 mA |
| MMBD4148CC | MMBD Series 350 mW 100 V 200 mA Surface Mount Small Signal Diode - SOT-23-3 | Power Dissipation: 350 mW Reverse Voltage-Max [Vrrm]: 100 V Reverse Recovery Time-Max: 4 ns Average Forward Current-Max: 0.2 A Peak Current-Max: 2 A |
| NC7SB3157P6X | NC7SB3157 Series 1.65 to 5.5 V Multiplexer/Demultiplexer Bus Switch - MICROPAK-6 | Signal Type: Analog Configuration: 2:1 No of Channels: 1 Supply Voltage: 1.65 to 5.5 V ON Resistance: 15 Ω |
| NC7SZ14M5X | NC7SZ14 Series 5.5 V TinyLogic® UHS Inverter with Schmitt Trigger Input-SOT-23-5 | Logic Circuit: Inverter No of Functions / Channels: 1 Supply Voltage-Nom: 1.65 to 5.5 V |
| NC7WZ17P6X | NC7WZ17 Series 5.5 V TinyLogic UHS Dual Buffer w/ Schmitt Trigger Inputs-SC-70-6 | Logic Circuit: Buffer No of Functions / Channels: 2 Supply Voltage-Nom: 1.65 to 5.5 V |
| FDG6301N | N-Channel 25 V 4 Ohm Dual Surface Mount Digital FET - SC-70-6 | Channel Type: Dual N-Channel Drain-to-Source Voltage [Vdss]: 25 V Drain-Source On Resistance-Max: 4 Ω Qg Gate Charge: 0.4 nC Rated Power Dissipation: 0.3 W |
| MMBD1203 | MMBD Series 350 mW 100 V 200 mA Surface Mount Small Signal Diode - SOT-23-3 | Power Dissipation: 350 mW Reverse Voltage-Max [Vrrm]: 100 V Reverse Recovery Time-Max: 4 ns Average Forward Current-Max: 0.2 A Peak Current-Max: 2 A |
| LP2951CMX | LP2951 Series 5 V / ADJ Output 0.1 A Micro Power Voltage Regulator - SOIC-8 | Dropout Voltage-Max: 600 mV Output Voltage: 5 V Output Current-Max: 100 mA Input Voltage-Max: 30 V |